Mitsubishi Electric to Launch N-series 1200V SiC-MOSFET

Mitsubishi Electric will exhibit its new N-series 1200V SiC-MOSFET at major trade shows, including PCIM Asia 2020 in Shanghai, China from November 16 to 18.
¹ Input capacitance/mirror capacitance (Ciss/Crss), as calculated by Mitsubishi Electric

Product Features

Reduced power consumption and miniaturization of power-supply systems

• Junction field effect transistor (JFET) doping technology reduces both switching loss and on-resistance, achieving an industry-leading² figure of merit (FOM³) of 1,450mΩ・nC. Power consumption in power-supply systems is reduced by approximately 85% compared to using conventional Si-IGBTs.
• By reducing mirror capacitance⁴, self-turn-on tolerance improves by 14 times compared with competitor's products. Thus, fast switching operation can be realized and helps reduce switching loss.
• Reduced switching-power loss enables the downsizing and simplification of cooling systems as well as the downsizing of peripheral components, such as reactor by driving the power semiconductor with a higher carrier frequency⁵, thereby helping to reduce the cost and size of overall power-supply systems.

² As of June 16, 2020 according to Mitsubishi Electric research
³ Performance index of Power MOSFET, calculated by multiplying the on-resistance by the gate-drain charge (100°C junction temperature). Smaller values indicate better performance
⁴ Stray capacitance between Gate and Drain existing in MOSFET structure (Crss)
⁵ Frequency that determines the ON/OFF timing of the switching element in an inverter circuit