Perovskite solar cells, which have managed to achieve a conversion efficiency of up to 25% in recent tests, have made a lot of significant progress in the past few years. Using a n-i-p cell architecture, a team of scientists from Saudi Arabia were able to create an advanced perovskite-silicon tandem cell that features an impressive conversion efficiency of 27%.
It has been discovered from multiple solar technologies that N-type cells exceed P-type cells in performance, and the two exhibit insignificant differences in preparation of production. For mono-Si solar, doped N-type mono-Si cells possess numerous apparent advantages over doped P-type mono-Si cells.
The n-i-p architecture of perovskite solar successively prepares the electron transporting layer, perovskite, electron hole transporting layer, and anode metal, whereas the p-i-n architecture first prepares the electron hole transporting layer before applying the perovskite, electron transporting layer, and cathode metal. Perovskite solar with a n-i-p architecture usually has a higher conversion efficiency and better performance, though the p-i-n architecture is simpler, cheaper, emits a lower temperature, and is capable of being combined with traditional solar cells into tandem solar cells. It has therefore received a lot more spotlight than the n-i-p architecture.
Past studies have pointed out that a combination of n-i-p perovskite cells with silicon solar often derives unsatisfactory performances. According to these studies, the p-i-n architecture, despite featuring a lower level of efficiency, is often the preferred option. A team of scientists at Saudi Arabia's King Abdullah University of Science and Technology (KAUST), however, has recently discovered that the former cell architecture should not be discarded, and that more research and testing are required.
The research team has created a brand new selective exposure layer through amorphous niobium oxide materials. A selective exposure layer usually converts light into power, and lights that cannot be converted would be transformed into waste heat. Erkan Adin, a researcher at KAUST, commented that the new exposure layer allows the N-type tandem solar cell to capture more light. According to the scientist, the newly developed exposure material is able to convert absorbed light into energy in a more efficient manner.
Hoping to develop solar panels that contain higher efficiency by using the n-i-p tandem cell technology, the research team believes that this particular technology can be applied on the field of hydrogen production using PV water splitting.
The next step for the research team is to expand on the scale of the equipment by incorporating full sized 6” wafers. “At KAUST, we are working to scale up this platform towards the industrial standards of the silicon technology, namely six inches wafers,” commented Stefaan de Wolf, the supervisor of the team. “We already develop our tandem technologies on double-side textured SHJ cells, which is today’s industry standards.”
(Cover photo source: shutterstock)